Preparation of PZT Thin Films by Liquid-Source MOCVD Using of Cyclohexane Solvent |
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| Authors: | Yutaka Nishioka Takeshi Masuda Masahiko Kajinuma Takakazu Yamada Masaki Uematsu Koukou Suu |
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| Affiliation: | Institute for Semiconductor Technologies, ULVAC, Inc., 1220-1 Suyama, Susono, Shizuoka 410-1231, Japan |
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| Abstract: | ![]()
Pb(Zr, Ti)O3 thin films were grown on 8-inch Ir(111)/SiO2/Si substrate by a MOCVD system aiming at application utilizing high-density ferroelectric memory (FRAM). Two types of solvents, THF and cyclohexane were used for liquid source delivery. It was found that the ferroelectric properties of the MOCVD-PZT films using cyclohexane solvent were better than them using THF solvent. By choosing cyclohexane as solvent, the MOCVD-PZT thin films showed strong ?111? preferred orientation and the Pt/PZT/Ir capacitors exhibited promising ferroelectric performances, for instance, large switching charge (Qsw) of 56.4 uC/cm2. |
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| Keywords: | PZT ferroelectric thin films Liquid-source MOCVD solvent THF cyclohexane ferroelectric memory FRAM |
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