Pb(Zr,Ti)O3 thin film growth on yttrium-treated Si(100) |
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| Authors: | N J Wu A Ignatiev A Mesarwi H D Shih |
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| Affiliation: | 1. Space Vacuum Epitaxy Center and Texas Center for Superconductivity, University of Houston , Houston, Texas, 77204-5507, USA;2. Central Research Laboratories , Texas Instruments Incorporated , P.O. Box 655936, MS 154, Dallas, Texas, 75265, USA |
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| Abstract: | Abstract Pulsed laser ablation has been used to deposit ferroelectric Pb(Zr, Ti)O3 (PZT) thin films on Si(100) and on yttrium-treated Si(100) substrates. The yttrium (Y) treatment of a Si surface followed by oxidation resulted in formation of a very thin, Y-enhanced SiO2 antidiffusion barrier layer, thereby suppressing the undesirable PZT/Si interdiffusion. The best PZT film grown on Y-treated Si(100) had a breakdown voltage of 0.6 MV/cm, a coercive field of 71 KV/cm, and a remanent polarization of 18 μC/cm2. |
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| Keywords: | Ferroelectric PZT Film on Si Laser Ablation |
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