Brush plated copper indium sulphide films and their properties

Copper indium sulphide films were deposited for the first time by the brush plating technique at different electrolyte temperatures in the range of 30–80 °C and at a constant deposition current density of 5.0 mA cm^?2. The Films exhibited single phase copper indium sulphide. The grain size increased with increase of electrolyte temperature. Optical band gap of the films varied in the range of 1.30–1.42 eV. Atomic force microscopy studies indicated that the grain size vary from 600 to 1,000 nm, with increase of substrate temperature. Solar cells fabricated with the films exhibited V_oc of 650 mV, J_sc of 19.5 mA cm^?2, ff of 0.73 and efficiency of 9.50 %.