北京正负电子对撞机次级束质子单粒子翻转计算和试验研究

北京正负电子对撞机(BEPC)电子直线加速器试验束打靶产生的次级束中包含质子,其中能量约为50MeV~100MeV的质子占有很大比例,这弥补了国内高能质子源的空白。本工作计算得到次级束中的质子能谱,建立质子单粒子翻转截面计算方法,在北京正负电子对撞机次级束质子辐射环境中,计算静态随机存取存储器的质子单粒子翻转截面,设计了SRAM质子单粒子翻转截面测试试验,发现SRAM单粒子翻转和注量有良好的线性,这是SRAM发生单粒子翻转的证据。统计得到不同特征尺寸下SRAM单粒子翻转截面,试验数据与计算结果相符,计算和试验结果表明随着器件特征尺寸的减小器件位单粒子翻转截面减小,但器件容量的增大,翻转截面依然增大,BEPC次级束中的质子束可以开展中高能质子单粒子效应测试。

SRAM single event upset calculation and test using protons in the secondary beam in the BEPC

The protons in the secondary beam on Beijing Electron Positron Collider (BEPC) are first analyzed, and there is large proportion at the energy of 50MeV~100MeV, this supply a gap of source of high energy proton. In this study, the proton energy spectrum of secondary beam was obtained; a model for calculating the proton Single Event Upset (SEU) cross section of SRAM cell has been presented, in BEPC secondary beam proton radiation environment, The proton SEU cross section for different characteristic dimension have been calculated. The test of SRAM SEU cross section has been designed, and the good linear relation between SEU in SRAM and fluence was found, this is the evidence that SRAM has taken place SEU; the SEU cross sections were measured in SRAM with different dimensions. The test result shows that the SEU cross section per bit will decrease with the decrease of characteristics dimensions of device, while total SEU cross section still increases upon the increase of device capacity. Test data accords with calculation results, so the high-energy proton SEU test on the proton beam in BEPC secondary beam could be conducted.