| 基于多价离子束流的高能量注入工艺研究 |
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| 引用本文： | 徐敏杰,丁伯继,崔建,王旭,蔡雪原,杨建红.基于多价离子束流的高能量注入工艺研究[J].半导体技术,2010,35(11):1078-1082. |
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| 作者姓名： | 徐敏杰 丁伯继 崔建 王旭 蔡雪原 杨建红 |
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| 作者单位： | 兰州大学物理学院,兰州,730000;杭州士兰集成电路有限公司,杭州,310018 |
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| 摘 要： | 针对专用高能量注入设备价格昂贵、维护成本高等问题,研究了一种基于二价、三价离子束流提升中低能设备能量上限的离子注入工艺。利用离化质量分析谱线分析了多价离子的筛选,介绍了元素沾污和能量沾污的工艺风险及其防治方法,设计了多价离子和单价离子注入的对比实验。结果表明,在注入到硅片的多价离子与单价离子总能量相等的条件下,二者注入结深一致,测试片的方块电阻差异仅为2.5%,验证了此工艺的可行性,以期达到充分发挥设备潜力、优化产品工艺的目的。
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| 关 键 词： | 多价离子 离子注入 高能量 离化质量分析谱线 沾污 |
High-Energy Ion Implantation Technique Based on Multiple Charged Ion Beams |
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| Xu Minjie,Ding Boji,Cui Jian,Wang Xu,Cai Xueyuan,Yang Jianhong.High-Energy Ion Implantation Technique Based on Multiple Charged Ion Beams[J].Semiconductor Technology,2010,35(11):1078-1082. |
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| Authors: | Xu Minjie Ding Boji Cui Jian Wang Xu Cai Xueyuan Yang Jianhong |
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| Affiliation: | Xu Minjie1,Ding Boji2,Cui Jian2,Wang Xu2,Cai Xueyuan1,Yang Jianhong1(1.School of Physical Science,Lanzhou University,Lanzhou 730000,China,2.Hangzhou Silan Integrated Circuit Co.,Ltd.,Hangzhou 310018,China) |
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| Abstract: | In view of the expensive high-energy ion implantation equipments and the high maintenance cost,the high-energy ion implantation technique based on the double and triple charged ions to increase the effective ion energy was researched.Based on the quality analytical spectral lines,the principle of selecting ions was analyzed.The prevention of element and energy contaminations was presented.The experiment results show that the injection depths are the same and the difference of sheet resistances is only 2.5% ... |
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| Keywords: | multiple charged ion ion implantation high-energy quality analytical spectral lines contamination |
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