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A Self‐Aligned High‐Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering
Authors:Kuan‐I Ho  Mohamed Boutchich  Ching‐Yuan Su  Rosalia Moreddu  Eugene Sebastian Raj Marianathan  Laurent Montes  Chao‐Sung Lai
Affiliation:1. Department of Electronic Engineering, Chang Gung University, Kwei‐Shan, Tao‐Yuan, Taiwan;2. GeePs, CNRS UMR8507, CentraleSupelec, Univ Paris‐Sud, Sorbonne Universités‐UPMC Univ Paris 06, Gif‐sur‐Yvette, CEDEX, France;3. Graduate Institute of Energy Engineering, National Central University, Jhongli City, Taoyuan County, Taiwan;4. Department of Electronic Engineering, Polytechnic of Turin, Torino, Italy;5. Grenoble INP‐Phelma, Université Grenoble Alpes, Grenoble, CEDEX 01, France;6. IMEP‐LAHC, Grenoble INP, Grenoble, France
Abstract:
Keywords:field‐effect transistors  fluorographene  graphene  scattering  self‐aligned
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