Low threshold current AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure distributed-feedback lasers grown by metalorganic chemical vapor deposition |
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| Authors: | Honda K. Hirata S. Ohata T. Horii S. Kojima C. |
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| Affiliation: | Sony Corporation Research Center, Yokohama, Japan; |
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| Abstract: | AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure (SCH) distributed-feedback (DFB) lasers emitting at 880 nm were fabricated by a two-step atmospheric pressure metalorganic chemical vapor deposition (MOCVD) growth technique. A CW threshold current as low as 18 mA and an output power of more than 10 mW per facet at room temperature were obtained. Also, single longitudinal and fundamental transverse modes were maintained up to more than twice the threshold current level. |
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