Design and fabrication of low-threshold 1.55-μm graded-indexseparate-confinement heterostructure strained InGaAsPsingle-quantum-well laser diodes

This paper presents a guideline for designing an optimum low-threshold 1.55-μm graded-index (GRIN) separate confinement-heterostructure (SCH) strained InGaAsP single quantum-well (SQW) laser diode (LD). The guideline was formulated based on the results of numerical and experimental analysis. After calculating the sheet carrier density at the lasing threshold, the guideline was obtained by considering the tradeoff between carrier and optical confinements in the well: the GRIN layer energy gap should be varied parabolically from InP to InGaAsP having a band gap wavelength of 1.1 μm to inject a large number of carriers into the well, and the thickness of one side of the GRIN layer should be more than 300 nm to keep a strong optical confinement. The GRIN SQW LD designed using the guideline has a J_th as low as 98 A/cm² at a cavity length of 5 mm, which proves the guideline is effective for designing low-threshold 1.55-μm GRIN SQW LDs