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GaAs planar Gunn digital devices by sulphur-ion implantation |
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| Authors: | Mizutani T. Kurumada K. |
| Affiliation: | NTT, Electrical Communication Laboratory, Musashino, Japan; |
| Abstract: | Schottky-barrier-gate Gunn-effect devices have been fabricated in n-type layers produced by sulphur-ion implantation into Cr-doped semi-insulating GaAs substrates. The device performance was examined and a satisfactory gate trigger sensitivity was obtained under d.c. bias conditions. |
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