Two-dimensional interface structures of epitaxial (Ba,Sr)TiO3 film on miscut (001) MgO |
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| Authors: | Jiechao Jiang Jie He Efstahios I. Meletis Chonglin Chen Yuan Lin James S. Horwitz Allan J. Jacobson |
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| Affiliation: | aDepartment of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, USA;bDepartment of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA;cTcSUH and Department of Physics, University of Houston, Houston, Texas 77204, USA;dNaval Research Laboratory, Washington, DC 20375, USA;eDepartment of Chemistry, University of Houston, Houston, Texas 77204, USA |
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| Abstract: | We report on the effect of substrate miscut on the 2-dimensional interfacial structure and dielectric properties of the epitaxial Ba0.6Sr0.4TiO3/MgO. Epitaxial Ba0.6Sr0.4TiO3 films on vicinal (001) MgO grown by pulsed-laser ablation were studied using transmission electron microscopy (TEM). Plan-view TEM showed that the films grown on the substrate with miscut angles of 1.2°, 3.5°, and 5.3° have lattice mismatches of − 5.6%, − 6.0% and − 5.7% at the interface, larger than the values (− 5.4%, − 5.7% and − 5.5%, respectively) obtained using cross-section TEM. The films grown on 1.2° and 5.3° miscut substrates consist of commensurate domains with sizes about 30 to 40 nm at the interface, significantly larger than those of 10 to 20 nm obtained for the films grown on the 3.5° miscut substrate. The films with larger commensurate domains at the interface exhibit about 30% higher dielectric constant and dielectric tunability than those with smaller commensurate domains. Initial measurements show that their interfacial differences have a tremendous effect on the dielectric properties of the films. |
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| Keywords: | Electron diffraction Electron microscopy Epitaxy Interfaces Oxides Dielectric properties |
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