| 钛掺杂对Ge2Sb2Te5薄膜相变特性的改善 |
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| 引用本文： | 张颖,魏慎金,易歆雨,程帅,陈坤,朱焕锋,李晶,吕磊.钛掺杂对Ge2Sb2Te5薄膜相变特性的改善[J].红外与毫米波学报,2015,34(6):658-662. |
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| 作者姓名： | 张颖 魏慎金 易歆雨 程帅 陈坤 朱焕锋 李晶 吕磊 |
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| 作者单位： | 复旦大学 光科学与工程系,复旦大学,复旦大学,复旦大学,复旦大学,复旦大学,复旦大学 光科学与工程系,潍坊医学院 医学物理系 |
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| 基金项目： | Grant Nos. 13ZR1402600, 60578047, 2012CB934303, 2009CB929201, 06DJ14007,2011ZX02402 and 2011ZRFL019. |
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| 摘 要： | 利用椭偏光谱术与XRD对钛掺杂Ge2Sb2Te5薄膜中钛元素对体系的光学性质及其微结构的影响进行了实验研究。进而对该薄膜进行的变温阻抗实验表明，钛掺杂Ge2Sb2Te5薄膜与未掺杂的薄膜相比具有更好的热稳定性。基于对薄膜样品的数据保持能力测试的实验数据，经阿伦纽斯外推处理可知，钛掺杂Ge2Sb2Te5薄膜样品的10年数据保持温度要高于未掺杂Ge2Sb2Te5薄膜样品。本文的实验结果均证实，钛掺杂Ge2Sb2Te5薄膜更适合应用于相变随机存取存储器中。
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| 关 键 词： | 钛掺杂Ge2Sb2Te5薄膜 相变特性 热稳定性 数据保持能力 |
| 收稿时间： | 2015/3/18 0:00:00 |
| 修稿时间： | 2015/9/30 0:00:00 |
Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films |
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| ZHANG Ying,WEI Shen-Jin,YI Xin-Yu,CHENG Shuai,CHEN Kun,ZHU Huan-Feng,LI Jing and LV Lei.Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films[J].Journal of Infrared and Millimeter Waves,2015,34(6):658-662. |
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| Authors: | ZHANG Ying WEI Shen-Jin YI Xin-Yu CHENG Shuai CHEN Kun ZHU Huan-Feng LI Jing and LV Lei |
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| Abstract: | The influence of Ti dopant in the titanium-doped Ge2Sb2Te5 film upon its optical and structural characteristics has been investigated by spectroscopic ellipsometry and x-ray diffraction. Temperature-dependent resistance tests have further revealed that Ti-doped Ge2Sb2Te5 films have better thermal stability than undoped one. Based on the Arrhenius extrapolation results from data retention tests, the endurance temperature corresponding to 10-year data retention of a Ti-doped Ge2Sb2Te5 cell is higher than that of a common Ge2Sb2Te5 cell without dopant. All these experimental results have confirmed that the Ti-doped Ge2Sb2Te5 films are more suitable for the application in phase-change random access memory. |
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| Keywords: | Ti-doped Ge2Sb2Te5 films phase-change behavior thermal stability data retention performance |
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