Some physical properties of thin MgO films produced by reactive evaporation |
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Authors: | S. Rakotomiraho E. Charles A. Boyer |
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Affiliation: | (1) Laboratoire de Physique Appliquée, CEM, Université des Sciences et Techniques du Languedoc, PI. E. Bataillon, 34060 Montpellier Cedex, France |
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Abstract: | Films of magnesium oxide were deposited by reactive evaporation using an electron gun. The films were polycrystalline with a preferential 1 1 1 orientation when their thickness was greater than 2 m. Based on the transmission coefficient in the visible and ultraviolet range, the optical gap was calculated to be E
g=4.3 eV. The a.c. and d.c. electrical properties were evaluated using a single model: conduction by electron hopping from a trap level to extended states in the conduction band. The ionization energy of this trap level, which was clearly due to oxygen vacancies, was E
i=(1.4±0.1) eV. |
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