基于胶体球掩模板法制备图形化蓝宝石衬底

制备并研究了纳米级图形化蓝宝石衬底.采用磁控溅射技术在蓝宝石衬底上沉积 SiO2薄膜,利用自组装方法在SiO2薄膜上制备单层聚苯乙烯(PS)胶体球阵列,利用感应耦合等离子体干法刻蚀将周期性PS胶体球的图形转移到SiO2薄膜上,通过湿法腐蚀制备了纳米级图形化蓝宝石衬底.利用扫描电子显微镜对胶体球掩膜、SiO2纳米柱掩膜和图形化蓝宝石衬底结构进行了观察,研究了湿法腐蚀蓝宝石衬底的中间产物对刻蚀的影响,分析了腐蚀温度和腐蚀时间对蓝宝石衬底的影响.结果表明,湿法腐蚀的中间产物会降低蓝宝石衬底的刻蚀速率.蓝宝石衬底的腐蚀速率随着腐蚀温度的升高而加快;在同一腐蚀温度下,随着腐蚀时间的增加,图形尺寸进一步减小.

Preparation of the Nanopatterned Sapphire Substrate Based on the Colloidal Sphere Mask

Nanopatterned sapphire substrate was prepared and investigated. First, SiO2 thin films were deposited on sapphire substrate by magnetron sputtering. Then,the monolayer polystyrene (PS) colloidal spheres array was prepared on the SiO2 film by the self-assembly method. The periodic patterns of PS colloidal spheres were transferred to the SiO2 film by inductively coupled plasma dry etching, and finally the nanopatterned sapphire substrate was obtained by wet etching with SiO2 hard mask. The structures of the colloidal sphere mask,the SiO2 nanorod mask and the patterned sapphire substrate were examined by the scanning electron microscope. The effect of intermediate products by wet etching of the sapphire substrate was studied, and the effects of etching temperatures and etching time on sapphire substrates were analyzed. The research results show that the intermediate products by wet etching can reduce the etching rate of the sapphire substrate. The etching rate of the sapphire substrate increases with the increase of etching temperature. At the same etching temperature, the pattern size decreases with the increase of the etching time.