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Examination of intervalence band absorption and its reduction bystrain in 1.55 μm compressively strained InGaAs/InP laser diodes |
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| Authors: | Ring W.S. |
| Affiliation: | Dept. of Phys., Dublin City Univ.; |
| Abstract: | Reduction of intervalence band absorption found in highly strained semiconductor lasers is dominated by enhancement in the TE gain spectrum due to the inclusion of compressive strain in the active layer and not by a change in the S-like character of the spin-orbit band |
| Keywords: | |