| SOI热光4×4光开关阵列的研制 |
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| 引用本文： | 王章涛,樊中朝,夏金松,陈少武,余金中.SOI热光4×4光开关阵列的研制[J].半导体学报,2004,25(12). |
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| 作者姓名： | 王章涛 樊中朝 夏金松 陈少武 余金中 |
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| 作者单位： | 中国科学院半导体研究所,集成光电子国家重点联合实验室,北京,100083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家高技术研究发展计划(863计划)，国家自然科学基金 |
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| 摘 要： | 设计和制作了由5个2×2多模干涉马赫-曾德开关元组成的重排无阻塞型SOI 4×4热光开关阵列.阵列的最小和最大附加损耗分别为6.6和10.4dB,阵列的串扰为-12 ～-19.8dB,光开关阵列的开关速度小于30μs,单个开关元的功耗大约为330mW.
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| 关 键 词： | 集成光学 马赫-曾德干涉仪 开关阵列 光开关 |
Design and Fabrication of Thermo-Optic 4×4 Switching Matrix in Silicon-on-Insulator |
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| WANG Zhangtao,FAN Zhongchao,XIA Jinsong,Chen Shaowu,Yu Jinzhong.Design and Fabrication of Thermo-Optic 4×4 Switching Matrix in Silicon-on-Insulator[J].Chinese Journal of Semiconductors,2004,25(12). |
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| Authors: | WANG Zhangtao FAN Zhongchao XIA Jinsong Chen Shaowu Yu Jinzhong |
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| Abstract: | A rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based Mach-Zehnder interferometer(MMI-MZI) switch elements，is designed and fabricated.The minimum and maximum excess loss for the matrix are 6.6 and 10.4dB,respectively.The crosstalk in the matrix is measured to be between －12 and －19.8dB.The switching speed of the matrix is less than 30μs.The power consumption for the single switch element is about 330mW. |
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| Keywords: | integrated optics silicon-on-insulator matrix switches PLC technology |
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