| 蓝宝石衬底AlGaN/GaN共栅共源微波HEMTs器件 |
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| 引用本文： | 邵刚,刘新宇,和致经,刘健,吴德馨. 蓝宝石衬底AlGaN/GaN共栅共源微波HEMTs器件[J]. 半导体学报, 2004, 25(12) |
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| 作者姓名： | 邵刚 刘新宇 和致经 刘健 吴德馨 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，中国科学院知识创新工程项目 |
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| 摘 要： | 报道了蓝宝石衬底AlGaN/GaN共栅共源器件的制备与特性.该器件包括栅长为0.8μm共源器件与栅长为1μm的共栅器件.实验表明,共栅器件的第二栅压会显著影响器件饱和电流与跨导特性,从而控制功率增益.与共源器件相比,共栅共源器件表现出稍低的 f T、较低的反馈、显著增加的功率资用增益及较高的端口阻抗.
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| 关 键 词： | 共栅共源 宽带 AlGaN/GaN HEMTs 蓝宝石 |
Cascode Connected AlGaN/GaN Microwave HEMTs on Sapphire Substrates |
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| SHAO Gang,Liu Xinyu,He Zhijing,Liu Jian,Wu Dexin. Cascode Connected AlGaN/GaN Microwave HEMTs on Sapphire Substrates[J]. Chinese Journal of Semiconductors, 2004, 25(12) |
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| Authors: | SHAO Gang Liu Xinyu He Zhijing Liu Jian Wu Dexin |
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| Abstract: | Fabrication and characteristics of cascade connected AlGaN/GaN HEMTs grown on sapphire substrates are reported.The circuit employs a common source device,which has a gate length of 0.8μm cascode connected to a 1μm common gate device.The second gate bias will not only remarkably affect saturated current and transconductance,but also realize power gain control.Cascode device exhibits a slight lower of f T,a less feedback,a largely greater of maximum available gain and a higher impedance compare to that of common source device. |
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| Keywords: | cascade broadband AlGaN/GaN HEMTs sapphire |
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