| RF-MBE生长的AlGaN/GaN高电子迁移率晶体管特性 |
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| 引用本文： | 王晓亮,胡国新,王军喜,刘新宇,刘键,刘宏新,孙殿照,曾一平,钱鹤,李晋闽,孔梅影,林兰英.RF-MBE生长的AlGaN/GaN高电子迁移率晶体管特性[J].半导体学报,2004,25(2). |
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| 作者姓名： | 王晓亮 胡国新 王军喜 刘新宇 刘键 刘宏新 孙殿照 曾一平 钱鹤 李晋闽 孔梅影 林兰英 |
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| 作者单位： | 1. 中国科学院半导体研究所,北京,100083
2. 中国科学院微电子中心,北京,100029 |
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| 基金项目： | 国家自然科学基金，国家重点基础研究发展计划(973计划)，国家高技术研究发展计划(863计划) |
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| 摘 要： | 用射频分子束外延技术研制出了室温迁移率为1035cm2/(V·s),二维电子气浓度为1.0×1013cm-2,77K迁移率为2653cm2/(V·s),二维电子气浓度为9.6×1012cm-2的AlGaN/GaN高电子迁移率晶体管材料.用此材料研制的器件(栅长为1μm,栅宽为80μm,源-漏间距为4μm)的室温非本征跨导为186mS/mm,最大漏极饱和电流密度为925mA/mm,特征频率为18.8GHz.
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| 关 键 词： | 高电子迁移率晶体管 氮化镓 场效应晶体管 RF-MBE |
Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy |
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| Wang Xiaoliang,Hu Guoxin,Wang Junxi,Liu Xinyu,Liu Jian,LIU Hongxin,Sun Dianzhao,Zeng Yiping,Qian He,Li Jinmin,Kong Meiying,Lin Lanying.Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy[J].Chinese Journal of Semiconductors,2004,25(2). |
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| Authors: | Wang Xiaoliang Hu Guoxin Wang Junxi Liu Xinyu Liu Jian LIU Hongxin Sun Dianzhao Zeng Yiping Qian He Li Jinmin Kong Meiying Lin Lanying |
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| Abstract: | AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035cm2/(V·s) at sheet electron concentration of 1.0×1013cm-2 at room temperature.For the devices fabricated using the materials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic transconductance of 186mS/mm are obtained on devices with gate length and width of 1μm and 80μm respectively.The ft,unit-current-gain frequency of the devices,is about 18.8GHz. |
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| Keywords: | HEMT GaN FET RF-MBE |
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