| UHVCVD系统电阻丝加热3＂硅片热平衡状态分析 |
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| 引用本文： | 陈伟华,叶志镇,曹青,张侃.UHVCVD系统电阻丝加热3＂硅片热平衡状态分析[J].浙江大学学报(自然科学版 ),1996(5). |
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| 作者姓名： | 陈伟华 叶志镇 曹青 张侃 |
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| 作者单位： | 浙江大学硅材料国家重点实验室 |
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| 基金项目： | 国家教委优秀年轻教师基金,博士点基金,浙江省自然科学基金 |
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| 摘 要： | 本文根据传热学基本原理，研究了超高真空化学气相外延（ＵＨＶＣＶＤ）系统中，电阻丝辐射加热装置在热平衡状态下硅片与各种部件之间的传热规律；建立了相应的热平衡热学模型，得到了硅片温度、电阻丝温度和加热总功率之间的关系．为在ＵＨＶＣＶＤ系统中控制硅片温度提供了理论依据．
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| 关 键 词： | ：辐射传热，热平衡，超高真空化学气相沉积，硅 |
The study on heat-equilibrium state of a 3" Si wafer heated with a radiating resistance in a UHVCVD system |
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| Chen Weihua, Ye Zhizhen, Cao Qing, Zhang Kan.The study on heat-equilibrium state of a 3" Si wafer heated with a radiating resistance in a UHVCVD system[J].Journal of Zhejiang University(Engineering Science),1996(5). |
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| Authors: | Chen Weihua Ye Zhizhen Cao Qing Zhang Kan |
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| Abstract: | n this paper,a heat transfer rule of a radiating resistance of a UHVCVD system in heat equilibrium state was studied according to the principles of heat transfer. The heat-equilibrium model was introduced. A relation among the temperature of silicon wafer,the temperature of radiating resistance and the total heating power was analysed and built. Experiments suggested that the relation will be helpful to control the temperature of silicon wafer during the chemical vapour deposition of silicon. |
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| Keywords: | radiant heat transfer heat-equilibrium state UHVCVD silicon |
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