3He Impurity Effects on the Growth Kinetics of 4He Crystals

We report the growth kinetics of the⁴He crystals with a small amount of³He impurities around 0.8 K. The growth resistance was measured using the response of the charged interface with respect to an externally applied voltage. In 5 ppm and 10 ppm³He mixtures, it is found that (1) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure⁴He and does not have a strong³He concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as pure⁴He. We discuss several possible explanations of the present experiment.