a Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
b Nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, D-97218 Gerbrunn, Germany
Abstract:
A GaAs metal–semiconductor field-effect transistor (MESFET) has been realized based on mix-and-match fabrication using optical lithography for the ohmic contacts and imprint lithography for the gate. The gate length and width are 1.2 and 80 μm, respectively, the channel length is 4 μm. For the gate definition a Si-mold is embossed into a thin polymer film located on top of an n-doped GaAs layer. The gate is fabricated by metal evaporation and lift-off.