Finite element analysis of Hall effect and magnetoresistance |
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| Authors: | Brauer JR Ruehl JJ MacNeal BE Hirtenfelder F |
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| Affiliation: | MacNeal-Schwendler Corp., Milwaukee, WI; |
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| Abstract: | This paper shows that the finite element method can be used to compute Hall voltages and electric fields, magnetoresistance, and current flow patterns. The computed Hall voltage is reduced (up to 54%) when the semiconductor geometry is changed from a narrow rod to a wide rod and when the sense electrodes are made of nonzero size. Both two-dimensional and three-dimensional geometries are analyzed |
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