Proton bombardment in n- and p-type Ga0.47In0.53As

Ga_0.47In_0.53As epitaxial layers on InP substrate have been subjected to proton bombardment. The resistivity increases up to 10⁴Ω cm for 10¹⁴H⁺/cm² in p-type and 3 · 10¹⁶H⁺/cm² in n-type a_0.47In_0.53As implanted at 77 K. Proton bombardment at 300 K showed this increase in resistivity only for p-type material. Channeling experiments indicated that the damage of the lattice which seems to be responsible for the resistivity increase of n-material can be produced only at low temperature with doses of the order of 10¹⁶H⁺/cm². Crystalline layers implanted with high dose showed blistering effects after heat treatments.