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1.5V高速全摆幅BiCMOS逻辑电路的研究
引用本文:王海永,邵志标. 1.5V高速全摆幅BiCMOS逻辑电路的研究[J]. 微电子学, 2000, 30(3): 155-157
作者姓名:王海永  邵志标
作者单位:西安交通大学,电子科学与技术系,陕西,西安,710049
摘    要:分析了影响BiCMOS全摆幅输出和高速度的因素,探索了一种新的抑制BJT过饱和和反馈网络,提出了具有高速全摆幅输出的BiCMOS逻辑单元。该单元可以工作于1.5V,并且易于多输入扩展,它特别适于VLSI设计。模拟结果表明,该单元实现了优于CMOS的全摆幅输出,且其速度高于同类CMOS电路10倍以上。

关 键 词:BiCMOS 逻辑电路 超大规模集成电路

A Study on a 1.5V High-Speed and Full-Swing BiCMOS Logic Circuit
WANG Hai-yong,SHAO Zhi-biao. A Study on a 1.5V High-Speed and Full-Swing BiCMOS Logic Circuit[J]. Microelectronics, 2000, 30(3): 155-157
Authors:WANG Hai-yong  SHAO Zhi-biao
Abstract:A novel full-swing and high-speed BiCMOS buffer whose supply voltage is lowered down to 1 5 V is pro posed A new feedback network that restra ins BJT from oversaturation is explored by analyzing factors affecting the full- swing output and high-speed of the BiCMO S logic circuit This new circuit can imp lement multi-input logic circuits with ease,and is especially suitable for VLSI design The proposed circuit outperfo rms CMOS in full-swing output and its sp eed is 10 times faster than CMOS circuit
Keywords:BiCMOS  Logic circuit  Full swing technique  VLSI
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