| Si/SiGe/Si HBT的直流特性和低频噪声 |
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| 引用本文： | 廖小平,张中平. Si/SiGe/Si HBT的直流特性和低频噪声[J]. 电子器件, 2003, 26(1): 22-24 |
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| 作者姓名： | 廖小平 张中平 |
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| 作者单位： | 东南大学微电子中心,南京,210096;东南大学微电子中心,南京,210096 |
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| 摘 要： | 在对Si/SiGe/Si HBT及其Si兼容工艺的研究基础上,研制成功低噪声Si/SiGe/Si HBT,测试和分析了它的直流特性和低频噪声特性,为具有更好的低噪声性能的Si/SiGe/Si HBT的研究建立了基础。
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| 关 键 词： | Si/SiGe/Si HBT 直流特性 低频噪声 |
| 文章编号： | 1005-9490(2003)01-0022-03 |
| 修稿时间： | 2002-09-16 |
Si/SiGe/Si HBT''''s DC Characterization and Its Low-frequency Noise |
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| LIAO Xiaoping,?? ?? ZHANG Zhongping. Si/SiGe/Si HBT''''s DC Characterization and Its Low-frequency Noise[J]. Journal of Electron Devices, 2003, 26(1): 22-24 |
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| Authors: | LIAO Xiaoping ?? ?? ZHANG Zhongping |
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| Affiliation: | Southeast University |
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| Abstract: | Based on the researches on Si/SiGe/Si HBT and its compatibility with Si process, one low noise Si/SiGe/Si HBT construction is fabricated. The HBT's DC characterization and its low frequency noise are measured and analyzed. Based on above researches, the better low noise Si/SiGe/Si HBT will be made out. |
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| Keywords: | Si/SiGe/Si HBT DC characterization low frequency noise |
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