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| 绝缘层上Si/应变Si1-xGex/Si异质结p-MOSFET电学特性二维数值分析 | |
| 引用本文： | 杨洲,王茺,于杰,胡伟达,杨宇.绝缘层上Si/应变Si1-xGex/Si异质结p-MOSFET电学特性二维数值分析[J].红外与毫米波学报,2015,34(2):172-176. |
| 作者姓名： | 杨洲 王茺 于杰 胡伟达 杨宇 |
| 作者单位： | 1. 云南大学光电信息材料研究所,云南昆明650091;中国移动通信集团设计院有限公司重庆分公司,重庆401147 2. 云南大学光电信息材料研究所,云南昆明,650091 3. 云南大学光电信息材料研究所,云南昆明650091;南京大学电子科学与工程学院固体微结构国家重点实验室,江苏南京210093 4. 中国科学院上海技术物理研究所红外物理国家重点实验室,上海,200083 |
| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目） |
| 摘 要： | 对绝缘层上Si/应变Si1-xGex/Si异质结p-MOSFET电学特性进行二维数值分析,研究了该器件的阈值电压特性、转移特性、输出特性.模拟结果表明,随着应变Si1-xGex沟道层中的Ge组分增大,器件的阈值电压向正方向偏移,转移特性增强;当偏置条件一定时,漏源电流的增长幅度随着Ge组分的增大而减小;器件的输出特性呈现出较为明显的扭结现象. |
| 关 键 词： | 应变Si1-xGex沟道 p-MOSFET 阈值电压 扭结 |
| 收稿时间： | 2013/9/16 0:00:00 |
| 修稿时间： | 2014/9/28 0:00:00 |
Two-dimensional numerical analysis for the electrical characteristics of Si/Strained Si1-xGex/Si hetero-junction-on-insulator p-MOSFET |
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| YANG Zhou,WANG Chong,YU Jie,HU Wei-Da and YANG Yu.Two-dimensional numerical analysis for the electrical characteristics of Si/Strained Si1-xGex/Si hetero-junction-on-insulator p-MOSFET[J].Journal of Infrared and Millimeter Waves,2015,34(2):172-176. | |
| Authors: | YANG Zhou WANG Chong YU Jie HU Wei-Da and YANG Yu |
| Affiliation: | Institute for Optoelectronic Information Materials, Yunnan University,Institute for Optoelectronic Information Materials,Yunnan University,School of Electron Science and Engineering, State Key Laboratory of Solid State Microstructures, Nanjing University,Shanghai Institute of Technical Physics, Chinese Academy of Science,Institute for Optoelectronic Information Materials,Yunnan University |
| Abstract: | A two-dimension numerical analysis for the electrical characteristics of Si/strained Si1-xGex/Si hetero-junction-on-insulator p-MOSFET has been complished. The characteristics of the threshold voltage, transfer and output were studied. The results indicate that the value of the threshold voltage has a positive offset and the transfer characteristics are improved with increase of Ge content. The growth rate of the drain-source current becomes lower with the increase of Ge content under a fixed bias voltage on the device, compained by obvious kink in the output characteristics. |
| Keywords: | strained Si1-xGex channel p-MOSFET threshold-voltage kink |
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