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脉冲激光沉积法制备ZnO基薄膜研究进展
引用本文:董伟伟,陶汝华,方晓东.脉冲激光沉积法制备ZnO基薄膜研究进展[J].量子电子学报,2006,23(1):1-9.
作者姓名:董伟伟  陶汝华  方晓东
作者单位:中国科学院安徽光学精密机械研究所,安徽,合肥,230031
基金项目:中国科学院安徽光学精密机械研究所资助项目
摘    要:作为一种新型的Ⅱ-Ⅵ半导体材料,ZnO具有优良的光学和电学性能,在紫外光发射器件、自旋功能器件、气体探测器、表面声波器件等领域有着广阔的应用前景.首先介绍了ZnO材料和脉冲激光溅射法的一些相关内容,然后从材料制备角度着重阐述了目前利用脉冲激光沉积法(PLD)制备ZnO基薄膜的若干重要研究方向,例如p型掺杂、p-n结的制备、Mg掺杂、Cd掺杂和磁性离子掺杂等.

关 键 词:激光技术  半导体材料  脉冲激光沉积法  ZnO基薄膜
文章编号:1007-5461(2006)01-0001-09
收稿时间:2004-11-02
修稿时间:2004-12-21

Recent advances on ZnO-based films synthesized by pulsed laser deposition
DONG Wei-wei,TAO Ru-hua,FANG Xiao-dong.Recent advances on ZnO-based films synthesized by pulsed laser deposition[J].Chinese Journal of Quantum Electronics,2006,23(1):1-9.
Authors:DONG Wei-wei  TAO Ru-hua  FANG Xiao-dong
Abstract:ZnO,as a novel material of Ⅱ-Ⅵ semiconductor,has excellent optical and electrical properties. ZnO-based thin films have considerable potential applications in many fields,such as UV light emitter,spin functional devices,gas sensors,transparent electronic and surface acoustic wave devices. Firstly,the relevant knowledge of ZnO and pulsed laser deposition is introduced,then recent advances on ZnO-based films,such as p-ZnO,p-n junction,Zn1-xMgxO thin film,Zn1-xCdxO thin films and magnetic ions doped ZnO thin films are illustrated with the emphasis
Keywords:laser techniques  semiconductor  pulsed laser deposition  ZnO-based thin films
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