Effect of zirconia phase on the reduction behaviour of highly dispersed zirconia-supported copper oxide |
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Affiliation: | 1. Institute of New Catalytic Materials Science, College of Chemistry, Nankai University, Tianjin 300071, China;2. State Key Laboratory for Physical Chemistry of Solid Surfaces, Department of Chemistry and Institute of Physical Chemistry, Xiamen University, Xiamen 361005, China;1. School of Materials and Metallurgy, University of Science and Technology Liaoning, Anshan 114051, People׳s Republic of China;2. School of Chemistry and Life Science, Anshan Normal University, Anshan 114007, People׳s Republic of China;3. School of Chemical Engineering, University of Science and Technology Liaoning, Anshan 114051, People׳s Republic of China;1. Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, CA, USA;2. Materials Development and Manufacturing Technology Group, NASA Jet Propulsion Laboratory/California Institute of Technology, MS 18-105, 4800 Oak Grove Dr. Pasadena, CA 91109, USA;1. School of Materials Science and Engineering, Liaocheng University, Shandong, Liaocheng 252000, PR China;2. Liaocheng Research Institute of Non-ferrous Metals, Liaocheng University, Shandong, Liaocheng 25200, PR China;3. Stomatology Department, Liaocheng Hospitial, Shandong, Liaocheng 252000, PR China;1. Radiation Laboratory, University of Notre Dame, Notre Dame, IN 46556, USA;2. Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556, USA;3. Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA |
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Abstract: | Reduction processes of copper oxide supported both on tetragonal and on monoclinic zirconia were investigated by means of hydrogen temperature-programmed reduction (H2-TPR). Results show that there exists apparent difference between the reduction behaviour of highly dispersed CuO supported on these two-phase zirconia; while two reduction peaks appear in the H2-TPR profile of monoclinic zirconia-supported monolayer CuO, only one reduction peak at low temperature is developed for tetragonal zirconia-supported counterpart. |
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