Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation |
| |
| Authors: | Tomohiro Kasakawa Hiroki Tabata Ryo Onodera Hiroki Kojima Mutsumi Kimura Hiroyuki Hara Satoshi Inoue |
| |
| Affiliation: | a Department of Electronics and Informatics, Ryukoku University, Otsu 520-2194, Japan;b Core Technology Development Center, Seiko Epson Corporation, Nagano 399-0293, Japan;c New Domain R&D Center, Seiko Epson Corporation, Nagano 399-0293, Japan |
| |
| Abstract: | We propose degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics. Since symmetrical normal and reverse characteristics indicate Joule-heating degradation whereas asymmetrical characteristics indicate hot-carrier degradation, they can be clearly and easily classified. Moreover, degradation occurrence is contrasted between standard and fine TFTs. Finally, behavior of the hot-carrier degradation is analyzed. |
| |
| Keywords: | Degradation evaluation Poly-Si Thin-film transistor (TFT) Reverse characteristic Hot-carrier degradation |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
