Influence of segregation on the composition of GaAs1−x
Sbx solid solutions grown by liquid-phase epitaxy |
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| Authors: | Yu. F. Biryulin |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | Physical and physicochemical processes potentially responsible for the gradient in the composition of the liquid phase in epitaxial growth of GaAs1?x Sbx films were analyzed. It is shown that gravity-induced liquation is the dominant mechanism in the case under consideration. |
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