| GaN基器件中的欧姆接触 |
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| 引用本文： | 邵庆辉,叶志镇,黄靖云. GaN基器件中的欧姆接触[J]. 材料导报, 2003, 17(3): 38-40,44 |
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| 作者姓名： | 邵庆辉 叶志镇 黄靖云 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027;浙江大学硅材料国家重点实验室,杭州,310027;浙江大学硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 国家重点基础研究发展计划(973计划),G2000068306, |
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| 摘 要： | GaN材料以其优良的光电性质,已成为制造发光器件和高温大功率器件的最有前途的材料。欧姆接触是制备GaN基器件的关键技术之一。着重论述了在n-GaN和p-GaN上制备欧姆接触的研究现状。
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| 关 键 词： | 氮化镓 欧姆接触 接触电阻率 |
Ohmic Contacts in GaN-based Devices |
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| SHAO Qinghui YE Zhizhen HUANG Jingyun. Ohmic Contacts in GaN-based Devices[J]. Materials Review, 2003, 17(3): 38-40,44 |
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| Authors: | SHAO Qinghui YE Zhizhen HUANG Jingyun |
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| Abstract: | Gallium nitride has become one of the most attractive materials for light emitting devices and high-temperature and high-power devices,due to its superior opto-electronic properties. Ohmic contact is a critical technology for preparing GaN based devices. In this paper,research progress in ohmic contacts in n-GaN and p-GaN is presented emphatically. |
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| Keywords: | GaN ohmic contact specific contact resistance |
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