Gigabit optical transmitter GaAs MESFET IC |
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| Authors: | Utsumi K. Tezuka A. Nishii K. Bando K. Inoue K. Onuma T. |
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| Affiliation: | Matsushita Electric Industrial Co. Ltd., Semiconductor Research Centre, Moriguchi, Japan; |
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| Abstract: | A GaAs optical transmitter IC consisting of input buffers, a D-type flip-flop, an NRZ/RZ code convertor and a light source current driver has been developed for use in fibre-optic communication systems, employing D-MESFET SCFL by the Pt buried gate FET process. 1.1 Gbit/s modulation of an LD in RZ format with 20 mA peak drive current has been demonstrated. |
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