Preparation and characterisation of Cd3P2, a II–V group compound semiconductor |
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Authors: | D R Rao V Bagulasankrithyan R A Tewari |
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Affiliation: | (1) Materials Science Centre, Indian Institute of Technology, 721 302 Kharagpur, India |
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Abstract: | Cadmium phosphide (α-Cd3P2) a II3–V2 compound semiconductor has been prepared by C/H2 reduction of cadmium phosphate. The reduction process is conducted at 550°C allowing the reaction to continue for 4 to 5
hr. The material always gets deposited on the walls of the quartz tube at different zones, which after analysis is found to
contain, depending upon the location of the zone, Cd3P2, CdP2 and other cadmium rich phosphides. The resistivity of the pressed samples are of the order of 3 × 10−4Θ-cm. Optical absorption spectra of thin films, obtained by thermal evaporation on glass substrates, have exhibited broad
bands around 620 nm. |
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Keywords: | Cadmium phosphate cadmium phosphide reduction process resistivity optical absorption |
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