Study on the characteristics of metal–organic interface for organic thin-film transistors |
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| Affiliation: | 1. Department of Electrical Engineering, National Cheng Kung University, 1 University Rd., Tainan 70101, Taiwan;2. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan;3. Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan;1. Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş 49250, Turkey;2. Department of Science Education, Faculty of Education, Muş Alparslan University, Muş 49250, Turkey;1. Department of Physics, Microelectronics and Instrumentation Laboratory, Av de l’environnement, 5019 Monastir, Tunisia;2. CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN, Univ. Lille, 59000, Lille, France;1. Faculty of Chemistry, University of Wroclaw, 14 F. Joliot-Curie, 50-383 Wroclaw, Poland;2. Department of Chemistry and Biochemistry, Faculty of Agronomy, Mendel University in Brno, Zemedelska 1, CZ-613 00 Brno, Czech Republic;3. Central European Institute of Technology, Brno University of Technology, Technicka 3058/10, CZ-616 00 Brno, Czech Republic;4. Department of X-ray Crystallography and Crystal Chemistry, Institute of General and Ecological Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland;5. Faculty of Chemistry, Wroclaw University of Technology, Wybrzeze Wyspiańskiego 27, 50-370 Wroclaw, Poland;6. Department of Chemistry, FPV, University of SS Cyril and Methodius, SK-917 01 Trnava, Slovakia |
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| Abstract: | ![]()
In this study, the interfacial characteristics between pentacene and Au layers were investigated with varying of the deposition rate of Au layer from 1.0 to 15.0 Å/s. For the devices with the structure of bottom-Au/pentacene/top-Au, it was observed that the electrical characteristics could be improved by increasing the deposition rate of top-Au, and the highest electrical conductivity value, 1.5 × 10−6 S/cm, was obtained for the device with the top-Au-deposited at 15.0 Å/s. AES results showed that the integrated atomic content of Au in top-Au layer is substantially increased with the deposition rate of top-Au, but there was no critical difference in the depth profile of Au atoms regardless of the deposition rate of top-Au. And also, we fabricated pentacene-based Schottky diodes and measured the hole injection barrier heights from Au electrode into pentacene layer using Fowler-Nordheim theory. Upon the investigations, it was observed that the hole injection barrier was reduced with increasing the deposition rate of Au electrode and the lowest value of 0.12 eV was obtained for the device with the Au electrode deposited at 15.0 Å/s. As a result, the performance of top-contact OTFT could be improved with increasing the deposition rate of Au electrodes (source and drain). |
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