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Structure and properties of resistive thick films after laser treatment
Authors:A. V. Paustovskii  B. M. Rud’  V. E. Shelud’ko  E. Ya. Tel’nikov  V. V. Kremenitskii  P. S. Smertenko  I. V. Zakharchenko  A. A. Rogozinskaya  V. N. Tkach
Affiliation:(1) Frantsevich Institute for Problems of Materials Science, Ukrainian Academy of Sciences, Kiev, Ukraine;(2) Technical Center, Ukrainian Academy of Sciences, Kiev, Ukraine;(3) Lashkarev Institute of Semiconductor Physics, Ukrainian Academy of Sciences, Kiev, Ukraine;(4) Shevchenko Kiev National University, Kiev, Ukraine;(5) Bakul’ Institute of Superhard Materials, Ukrainian Academy of Sciences, Kiev, Ukraine
Abstract:
We have studied the influence of laser radiation on the structure and electrophysical properties of resistive thick films based on BaB6-LaB6 solid solution. It has been shown that, in the course of laser treatment in the millisecond range, barium and lanthanum diffuse into the substrate, and micro-and nanosecond laser radiation leads to the breakup of current-conducting chains and the formation of domains with discrete structure. We have carried out a differential analysis of voltampere characteristics and determined the temperature dependences of electrical resistance R and resistance temperature coefficient. Laser treatment in the micro-and nanosecond ranges slightly increases the electrical resistance, which can be used for the precision treatment of thick films. __________ Translated from Fizyko-Khimichna Mekhanika Materialiv, Vol. 43, No. 6, pp. 79–85, November–December, 2007.
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