Elimination of parasitic bipolar-induced breakdown effects in ultra-thin SOI MOSFETs using narrow-bandgap-source (NBS) structure |
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| Authors: | Jai-Hoon Sim Chang-Hoon Choi Kinam Kim |
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| Affiliation: | Div. of Memory, Samsung Electron. Corp., Kyungki, South Korea; |
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| Abstract: | In this paper, we introduce the Si-SiGe narrow bandgap-source (NBS) SOI device structure in order to improve the low drain-to-source breakdown voltage (V/sub BD/) in ultra-thin SOI devices. Reducing the potential barrier of valence band between source and body by applying the SiGe layer at the source region, we can improve the drain-to-source breakdown voltage by suppressing the hole accumulation in the body. As confirmed by 2D simulation results, NBS-SOI devices provide excellent performance compared to conventional SOI devices.<> |
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