低噪声GaAs MESFET有源层的Si~+注入

本文叙述了用Si~+注入GaAs形成低噪声MESFET有源层的初步实验结果.获得了峰值载流子浓度为1～2×10(17)cm~(-3)、在交界面处迁移率≥3000cm~2/V·s的有源层,制出了在2GHz下NF为0.9dB、G_a为14.5dB的双栅FET和9.5GHz下NF为2.0dB、G_a为9.5dB的单栅FET.实验结果表明,采用Si~+注入沟道的器件达到了汽相外延器件的最佳性能,某些参数超过了汽相外延器件.

Si~+ Implantation for Low Noise GaAs MESFET Active Layer

This paper describes the results on primary tests of Si+ implantation into GaAs for making the active layer of low-noise MESFET. The active layer with peak carrier concentration of 1-2 × 10~(17)cm-3 and mobility of more than 3000cm2/V·S at interface was obtained. The dual-gate FET exhibiting the NF of 0.9dB with Ga of 14.5dB at 2GHz and single-gate FET showing the NF of 2.0dB with Ga of 9.5dB at 9.5GHz have been fabricated. The experimental results show that the devices employing Si+ implanted channel have achieved performence comparable to that of the best low noise FETs prepared by vapour phase epitaxy, and were superior to them in some parameters.