Low-Power Dynamic Memory Word Line Decoding for Static Random Access Memories

Conventional memory address decoders based on static CMOS gates incur high clock loading and unnecessary power dissipation in unselected banks. This paper presents a dynamic word line decoder which is fast, has reduced active and leakage power dissipation, and also enables faster race-free sense timing. In a multi-bank memory array with sixteen decoders, the energy–delay product of the dynamic decoder is 66% lower than a low-power static version. The design leverages the predictability of dynamic circuits to provide significant decoder leakage reduction in unselected banks. The dynamic decoder has been fabricated on a 90 nm bulk CMOS process. The measured test chip address to word line delay is 170 ps at 1.5 V and the measured leakage reduction is over 20x at $V_{rm DD}$ greater than 0.8 V.