| SnO2导电薄膜性能研究 |
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| 引用本文： | 王磊,杜军,毛昌辉,杨志明,熊玉华.SnO2导电薄膜性能研究[J].表面技术,2005,34(5):32-34,42. |
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| 作者姓名： | 王磊 杜军 毛昌辉 杨志明 熊玉华 |
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| 作者单位： | 北京有色金属研究总院能源与材料技术中心,北京,100088 |
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| 摘 要： | 采用射频反应溅射法制备SnO2导电薄膜,用AFM、XRD、XPS研究了薄膜的结构与表面化学组成对导电性能的影响,同时分析了衬底温度对薄膜导电性能的影响.结果表明:采用射频反应溅射制备的SnO2薄膜是具有(211)择优取向的多晶结构氧空位导电的n型半导体,衬底温度对于SnO2薄膜的微观结构和表面组成影响巨大,在低温衬底下制备的SnO2薄膜具有最佳的导电性能.
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| 关 键 词： | 导电性能 二氧化锡 薄膜 溅射 衬底温度 导电性能 薄膜性能 研究 Thin Film Property Conductive 最佳 低温 表面组成 微观结构 半导体 氧空位 多晶结构 择优取向 溅射制备 射频反应溅射 结果 衬底温度 分析 影响 |
| 文章编号： | 1001-3660（2005）05-0032-03 |
| 收稿时间： | 2005-07-08 |
| 修稿时间： | 2005-07-08 |
Study on Conductive Property of SnO2 Thin Film |
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| WANG Lei,DU Jun,MAO Chang-hui,YANG Zhi-ming,XIONG Yu-hua.Study on Conductive Property of SnO2 Thin Film[J].Surface Technology,2005,34(5):32-34,42. |
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| Authors: | WANG Lei DU Jun MAO Chang-hui YANG Zhi-ming XIONG Yu-hua |
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| Affiliation: | Research Center of Energy Materials and Engineering, General Research Institute for Nonferrous Metals, Beijing 100088, China |
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| Abstract: | Tin oxide thin films have been deposited on Si(100) substrates by reactive sputtering technique.Surface appearance and compositions were studied by AFM and XPS.Meanwhile the influences of substrate temperature on conductive properties were analyzed.The results revealed that the SnO_2 film having(211) orient preferred was the multi-crystal constructive n-type semiconductor whose carrier was oxygen hole.The effects on surface resistance and structure by substrate temperature were studied.SnO_2 films deposited at lower substrate temperature have better conductive properties. Conductive property;Tin oxide;Thin film;Sputtering;Substrate temperature |
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| Keywords: | Conductive property Tin oxide Thin film Sputtering Substrate temperature |
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