Strain-Engineered Si/SiGe Resonant Interband Tunneling Diodes Grown on $hbox{Si}_{0.8}hbox{Ge}_{0.2}$ Virtual Substrates With Strained Si Cladding Layers

Strain-engineered Si-based resonant interband tunneling diodes grown on commercially available Si_0.8Ge_0.2 virtual substrates were developed that address issues of P dopant diffusion and electron confinement. Strain-induced band offsets were effectively utilized to improve tunnel diode performance versus the control device, particularly the peak-to-valley current ratio (PVCR). By growing tensilely strained Si layers cladding the P delta-doping plane, the quantum well formed by the P delta-doping plane is deepened, which concurrently increases the optimal annealing temperature from 800 to 835 and facilitates an increase in the PVCR up to 1.8times from 1.6 to 2.8 at room temperature, which is significantly better than previous results on strained substrates.