Oxygen Incorporation in Czochralski Growth of Silicon under a Horizontal Magnetic Field

A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field(HMCZ)is proposed.Oxygen depleted surface melt,driven to the growth interface by the thermal Marangoni flow.determines oxygenconcentration in the grown crystals.Systematic study was carried out to investigate effects of growth parameters on oxygen in-corporation into crystals.