Si1-xGex/Si应变材料的生长及热稳定性研究

利用分子束外延（MBE）技术生长了Ge组份为0.1-0.46的Si1-xGex外延层。X射线衍射线测试表明，SiGe/Si异质结材料具有良好的结晶质量和陡峭界面，其它参数与可准确控制。通过X射线双晶衍射摆曲线方法，研究了经700℃、800℃和900℃退火后应变SiGe/Si异质结材料的热稳定性。结果表明，随着退火温度的提高，应变层垂直应变逐渐减小，并发生了应变弛豫，导致晶体质量退化；且Ge组分越小，Si1-xGex应变结构的热稳定性越好；室温下长时间存放的应变材料性能稳定。

A Study on the Growth of Si1-xGex Strained-Layer and Its Thermal Stability

Molecular Beam Epitaxy (MBE) has been used to grow strained Si 1-x Ge x (0 1 0 46) alloys The samples have been characterized by X ray double crystal diffraction The results show that the strained SiGe alloys have good crystalline quality and abrupt interfaces X ray double crystal diffraction rocking curve have been used to investigate the structure stability and stain relaxation of Si 1-x Ge x/Si stained layer, which was previously grown on Si (001), during annealing.It has been shown that the perpendicular strain values decrease as the annealing temperature is raised The stain layer was partially relaxed after annealing at different conditions, which causes the deterioration of the crystalline quality Si 1-x Ge x/Si stained layer is more thermally stable when the germanium fraction of SiGe layer is small At room temperature,the strain layer is stable