| Effects of Deflection on the Sio2 Barrier Layer and Mo Back Electrode of Cu（In,Ga）Se2 Thin-Film Solar Cells on Stainless Steel Substrates |
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| 作者姓名： | Shi Zonhong Liang Shihchang |
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| 作者单位： | Department of Mechatronics Engineering,National Changhua University of Education,Changhua 50007,Taiwan,China;Materials and Electro-Optics Research Division,Chung-Shan Institute of Science and Technology,Taoyuan County,Taiwan,China |
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| 基金项目： | supported in part by the Materials and Electro-Optics Research Division,Chung-Shan Institute of Science and Technology and the National Science Council of Taiwan,R.O.C.under contract numbers CSIST-769-V204 |
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| 摘 要： | This paper studies the effects of deflection on the SiO2 barrier layer and molybdenum(Mo)back electrode of Cu(In,Ga)Se2 thin-film solar cells,prepared via magnetron sputtering on type SUS431 stainless steel substrates.The surface micro-cracks and sheet resistance of thin films had been observed and measured for in-situ bend tests.Experimental results show that increasing the thickness of the SiOx barrier has a better property to prevent cracks induced by bending stress.The sheet resistance of a Mo film increases alongside the bending of the curvature radius.The maximum allowed value of the curvature radius of the SiOx barrier layer,molybdenum electrodes,and the thin film CIGS absorbing layer should be 16 mm,20 mm,and 26 mm,respectively.Therefore,the maximum curvature radius limit should be 26 mm or less for CIGS thin-film solar cells prepared via sputtering on type SUS431 stainless steel substrates.
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| 关 键 词： | electrochemical cell photosensing fill factor interface states photovoltage photocurrent |
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