| 微波GaAs功率场效应晶体管稳态温度场的数值模拟 |
| |
| 引用本文： | 袁泽亮,范垂祯.微波GaAs功率场效应晶体管稳态温度场的数值模拟[J].真空与低温,1994(3). |
| |
| 作者姓名： | 袁泽亮 范垂祯 |
| |
| 作者单位： | 兰州物理研究所 |
| |
| 摘 要： | 根据微波功率ＧａＡｓ功率场效应晶体管芯片结构特点建立热模型，用有限元法对模型数值求解得到芯片稳态温度分布。分析了影响芯片表面沟道温度的诸因素：功耗、芯片周围环境温度、ＧａＡｓ材热导率、芯片厚度、芯片热源分布及其跨导。
|
| 关 键 词： | 微波GaAs功率场效应晶体管（FET）、稳态温度场、有限元法、表面沟道温度 |
Numerical simulation of steady state temperature field in microwave GaAs power FETs |
| |
| Yuan Zeliang,FanChuizhen.Numerical simulation of steady state temperature field in microwave GaAs power FETs[J].Vacuum and Cryogenics,1994(3). |
| |
| Authors: | Yuan Zeliang FanChuizhen |
| |
| Affiliation: | Lanzhou Institute of physics |
| |
| Abstract: | The tliermal model of steady state temperature in microwave GaAs power FET Chips,hased on its geometry structure feature,is developed, its nulnerical solution is obtained with three dimension finite element rnethods,The factors which influence on chip surface channel temperature are analysed.including its power dissipation,its ambicnl lemperature,Ga-As material thermal conductivity,chio thickness,heat source distribution in the chip.FETs transcondtictance. |
| |
| Keywords: | Microwave GaAs power FET(fleld effect transistor) steady state temperature field finite element methods channed temperature |
| 本文献已被 CNKI 等数据库收录！ |
