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High quality textured ZnO:Al surfaces obtained by a two-step wet-chemical etching method for applications in thin film silicon solar cells |
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| Authors: | S. Ferná ndez,O. de AbrilF.B. Naranjo,J.J. Gandí a |
| Affiliation: | a División de Energías Renovables, Unidad de Energía Solar Fotovoltaica, Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas (CIEMAT), Avda. Complutense 22, 28040 Madrid, Spain b ISOM and Departamento de Física Aplicada, Escuela Técnica Superior de Ingenieros de Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain c Grupo de Ingeniería Fotónica, Departamento de Electrónica, Escuela Politécnica Superior, Universidad de Alcalá Campus Universitario, 28871 Alcalá de Henares, Madrid, Spain |
| Abstract: | ZnO:Al films deposited at 250 °C on Corning glass by radio frequency magnetron sputtering were studied for their use as front contact for thin film silicon solar cells. For this purpose, a two-step etching method combining different concentrations of diluted hydrochloric acid (from 0.1% to 3%) with different etching times was developed. Its influence on morphological, electrical and optical properties of the etched films was evaluated. This new etching method led to more uniform textured surfaces, where the electrical properties remained unchangeable after the etching process, and with adapted light scattering properties similar to those exhibited by commercial substrates. |
| Keywords: | RF sputtering ZnO:Al Texture surfaces Scattering properties |
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