Effect of residual stresses on mechanical properties and interface adhesion strength of SiN thin films |
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Authors: | Yi-Chung Huang Chih-Hsiang Chang |
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Affiliation: | a Department of Materials Science Engineering, National Chung Hsing University, Taichung 402, Taiwan b Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan |
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Abstract: | Residual stresses play a significant role in the mechanical reliability of thin films. Thus in this study, the mechanical properties and interface adhesion strengths of SiN thin films containing different residual stresses have been investigated by using nanoindentation and nanoscratch tests. With varied residual stresses from compressive to tensile, the penetration depth of nanoindentation tests shifted to a higher value. The hardness and elastic modulus decreased from 11.0 and 95 GPa, respectively, for the film containing a compressive stress of 235 MPa to 9.6 and 84 GPa for the film with a tensile stress of 86 MPa. With decreasing compressive stress and increasing tensile stress, the interface adhesion energy decreased from 1.8 to 1.5 J/m2. Compressive stresses were expected to blunt crack tips and inhibit crack propagation, while tensile stresses enlarged crack opening and facilitated crack propagation, thus changing the mechanical properties of the SiN thin films. |
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Keywords: | Residual stress Mechanical property Interface adhesion |
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