The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth — Study of surface morphology |
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| Affiliation: | 1. Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568, Japan;2. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Corporation (JST), Japan;3. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8573, Japan |
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| Abstract: | Surface properties of CVD diamond films grown with high admixture of B2H6 to H2 and CH4 are characterized in this paper. Results show that high contents of diborane in the gas phase cause a reduction of imperfections such as unepitaxial crystallites and pyramidal hillocks, which is characterized by optical microscopy. These results suggest that the boron atoms play an important role at the beginning of nucleation and during the CVD growth of diamond. |
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