| VGF法生长4英寸GaAs单晶固液界面形状和热应力的数值模拟研究 |
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| 引用本文： | 涂凡,苏小平,张峰燚,黎建明,丁国强,王思爱.VGF法生长4英寸GaAs单晶固液界面形状和热应力的数值模拟研究[J].稀有金属,2011,35(3). |
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| 作者姓名： | 涂凡 苏小平 张峰燚 黎建明 丁国强 王思爱 |
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| 作者单位： | 北京有色金属研究总院北京国晶辉红外光学科技公司,北京,100088 |
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| 摘 要： | 采用专业晶体生长数值模拟软件CrysMas,模拟了垂直梯度凝固法(VGF)生长4英寸GaAs单晶过程中的固液界面形状,发现晶体在生长过程中固液界面形状经历了由凹到凸的变化.数值模拟结果表明熔体中和晶体中的轴向温度梯度之比小于0.4时,固液界面为凸向熔体,与理论推导结果一致.模拟了晶体生长过程中固液界面附近的晶体中的热应力值,发现固液界面为平界面时晶体中的热应力具有最小值.推导计算了VGF GaAs单晶生长过程中固液界面凹(凸)度的临界值,当固液界面凹(凸)度小于该值时,晶体中的热应力低于临界剪切应力.
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| 关 键 词： | 数值模拟 垂直梯度凝固技术 GaAs 固液界面 热应力 |
Solid-Liquid Interface and Thermal Stress in Growth of 4-Inch VGF-GaAs Single Crystal by Numerical Simulation |
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| Tu Fan,Su Xiaoping,Zhang Fengyi,Li Jianming,Ding Guoqiang,Wang Siai.Solid-Liquid Interface and Thermal Stress in Growth of 4-Inch VGF-GaAs Single Crystal by Numerical Simulation[J].Chinese Journal of Rare Metals,2011,35(3). |
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| Authors: | Tu Fan Su Xiaoping Zhang Fengyi Li Jianming Ding Guoqiang Wang Siai |
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| Affiliation: | Tu Fan,Su Xiaoping,Zhang Fengyi,Li Jianming,Ding Guoqiang,Wang Siai(Guojing Infrared Optical Technology Co.,Ltd,General Research Institute for Non-Ferrous Metals,Beijing,100088,China) |
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| Abstract: | The numerical simulation was employed to simulate the solid-liquid interface shape during the 4-inch VGF-GaAs single crystal growth.It was found that the interface had experienced a deflection from concave to convex.The simulation result demonstrated that the interface would be convex to the melt when the ratio of the axial temperature gradient in the solid to that in the melt was smaller than 0.4,which was in agreement with the theory.The thermal stress in the solidification front was calculated,which was ... |
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| Keywords: | numerical simulation vertical gradient freeze GaAs solid-liquid interface thermal stress |
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