| ICP技术在化合物半导体器件制备中的应用 |
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| 引用本文： | 姚刚,石文兰.ICP技术在化合物半导体器件制备中的应用[J].半导体技术,2007,32(6):474-477,485. |
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| 作者姓名： | 姚刚 石文兰 |
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| 作者单位： | 1. 中国电子科技集团公司,第十三研究所,石家庄,050051
2. 河北工业职业技术学院,信息工程与自动化系,石家庄,050091 |
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| 摘 要： | 介绍了ICP刻蚀工艺技术原理和在化合物半导体器件制备中的应用,包括ICP刻蚀技术中的低温等离子体的形成机理、等离子体与固体表面的相互作用等,并对影响ICP刻蚀结果的因素进行了分析.研究了不同的工艺气体配比、腔体工作压力、ICP源功率和射频源功率对刻蚀的影响,并初步得到了一种稳定、刻蚀表面清洁光滑、图形轮廓良好、均匀性较好和刻蚀速率较高的干法刻蚀工艺.
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| 关 键 词： | 等离子体 感应耦合等离子 刻蚀 |
| 文章编号： | 1003-353X（2007）06-474-04 |
| 修稿时间： | 2007-03-15 |
Application of ICP Etching in the Fabrication of Compound Semiconductor Device |
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| YAO Gang,SHI Wen-lan.Application of ICP Etching in the Fabrication of Compound Semiconductor Device[J].Semiconductor Technology,2007,32(6):474-477,485. |
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| Authors: | YAO Gang SHI Wen-lan |
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| Affiliation: | 1. The 13^th Research lnstitute, CETC, Shijiazhuang 050051, China; 2. Dept. oflnformation Engineering and Automatization, Hebei Institute of Vocation and Technology, Shijiazhuang 050091, China |
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| Abstract: | The principle of ICP etching process technique and the applications in the fabrication of compound semiconductor device were introduced.The mechanism of low temperature plasma and the reciprocity between plasma and the surface of solid in the ICP etching technique were generalized.The factors that influenced ICP etching function were analyzed.The influences of etching gas ratio,chamber pressure,ICP power and RF power on etching pattern were investigated.A stable dry etch technique was obtained with clean and smooth etch surface,good pattern profile,good uniformity and high etch rate. |
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| Keywords: | plasma ICP etch |
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