| 单片低噪声HBT VCO |
| |
| 引用本文： | 陈新宇,林金庭.单片低噪声HBT VCO[J].固体电子学研究与进展,1998,18(3):269-274. |
| |
| 作者姓名： | 陈新宇 林金庭 |
| |
| 作者单位： | 南京电子器件研究所!210016 |
| |
| 摘 要： | 报道一组单片HBTVCO电路的设计、制作及其测试结果。电路采用HBT作为有源器件，PN结二极管作为变容管。S波段单片VCO的输出功率为0dBm，调谐范围100MHz，在载波频率2．84GHz处，相位噪声为－80dBc／Hz＠100kHz。以C波段单片HBTVCO的输出功率为－10dBm。这些结果表示HBT在微波与毫米波振荡器运用中具有较好的低相位噪声特性。
|
| 关 键 词： | 微波单片集成电路 异质结晶体管 压控振荡器 |
Low Noise HBT MMIC VCO |
| |
| Chen Xingyu, Lin Jinting , Chen Xiaojian.Low Noise HBT MMIC VCO[J].Research & Progress of Solid State Electronics,1998,18(3):269-274. |
| |
| Authors: | Chen Xingyu Lin Jinting Chen Xiaojian |
| |
| Abstract: | This paper describes the design, fabrication and performance of agroup of the monolithic VCOs using heterojunction bipolar transistor (HBT) as active device and integrated PN junction diode as the varactor. An 100 MHz continuous tuning bandwidth is achieved with output power of 0 dBm in S band. The phasenoise level of -80 dBc/Hz for offset frequency of 100 kHz is measured at 2. 84GHz. In C band,the VCOs output power is - 10 dBm. These results indicate thatHBTs are excellent candidates of active elements for low phase noise microwave andmillimeter-wave oscillator applications . |
| |
| Keywords: | MMIC HBT VCO |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
