Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate |
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| Authors: | Shiyang Zhu Rui Li Lee S.J. Li M.F. Du A. Singh J. Chunxiang Zhu Chin A. Kwong D.L. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore; |
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| Abstract: | Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as /spl sim/5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si. |
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